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| NTE351 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large-signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: D Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum Gain = 6.2dB Efficiency = 65% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Total Device Dissipation (Note 1, TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 15mA, VBE = 0 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 5mA, IC = 0 ICBO ICES ON Characteristics DC Current Gain hFE IC = 1A, VCE = 5V 5 - - VCB = 15V, IE = 0 VCE = 15V, VBE = 0, TC = +55C 18 36 4 - - - - - - - - - - 1.0 10 V V V mA mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Characteristics Output Capacitance Cob GPE VCB = 15V, IE = 0, f = 0.1MHz Pout = 25W, f = 175MHz Pout = 25W, f = 175MHz - 110 130 pF Symbol Test Conditions Min Typ Max Unit Functional Tests (VCC = 12.5V unless otherwise specified) Common-Emitter Amplifier Power Gain Collector Efficiency 6.2 65 - - - - dB % 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8-32-NC-3A .750 (19.05) Wrench Flat |
Price & Availability of NTE351
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